Rofi'i, I. (2005). Investigations Of Germanium And Damage Profiles On Channeling Implanted SI-GaAs Using Rutherford Bacscattering Channeling Spectrometry: Jurnal Transistor Publikasi Ilmiah Teknologi Industri. Fakultas Teknik Industri UNISSULA.
Chicago Style CitationRofi'i, Imam. Investigations Of Germanium And Damage Profiles On Channeling Implanted SI-GaAs Using Rutherford Bacscattering Channeling Spectrometry: Jurnal Transistor Publikasi Ilmiah Teknologi Industri. Fakultas Teknik Industri UNISSULA, 2005.
MLA CitationRofi'i, Imam. Investigations Of Germanium And Damage Profiles On Channeling Implanted SI-GaAs Using Rutherford Bacscattering Channeling Spectrometry: Jurnal Transistor Publikasi Ilmiah Teknologi Industri. Fakultas Teknik Industri UNISSULA, 2005.