Investigations Of Germanium And Damage Profiles On Channeling Implanted SI-GaAs Using Rutherford Bacscattering Channeling Spectrometry: Jurnal Transistor Publikasi Ilmiah Teknologi Industri

Main Author: Imam Rofi'i
Format: Jurnal
Language: Bahasa Indonesia
Published: Fakultas Teknik Industri UNISSULA 2005
Subjects:
Online Access: http://oaipmh-jogjalib.umy.ac.idkatalog.php?opo=lihatDetilKatalog&id=38795
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