Investigations Of Germanium And Damage Profiles On Channeling Implanted SI-GaAs Using Rutherford Bacscattering Channeling Spectrometry: Jurnal Transistor Publikasi Ilmiah Teknologi Industri
Main Author: | Imam Rofi'i |
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Format: | Jurnal |
Language: | Bahasa Indonesia |
Published: |
Fakultas Teknik Industri UNISSULA
2005
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Subjects: | |
Online Access: |
http://oaipmh-jogjalib.umy.ac.idkatalog.php?opo=lihatDetilKatalog&id=38795 |
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